This data was used for main results for the paper entitled "Coherent Optical Clock Down-Conversion for Microwave Frequencies with 10-18 Instability". We could calculate relative phase fluctuation and Allan deviation for both Yb optical clocks and 10 GHz microwaves. Uncertainty of our down-conversion system was also calculated from this.

Optical spectrum dataset for backward-wave spontaneous-parametric downconversion (BW SPDC) observed in sub-micron, periodically poled KTiOPO4 (PPKTP).

Rydberg atom-based receivers of modulated radio frequency (RF) fields are promising systems for measurements. These systems are self-calibrating, widely tunable, nearly transparent to RF fields, and can be electrically small. However, the instantaneous bandwidth of current Rydberg atom receivers is typically less than 1 MHz. Using two-photon electromagnetically induced transparency (EIT) to observe the 56D5/2 Rydberg state in cesium, we measure modulation sidebands on each tooth in a probe optical frequency comb that spans the D2 F=4-F'=5 transition resulting from transmission modulation of the probe beam. This transmission modulation occurs from changes in susceptibility of the room temperature cesium vapor as two RF fields impinge on the atoms. A strong RF local oscillator is resonant with the 56D-57P state and mixes with a weak RF signal field detuned from the RF LO by an intermediate frequency. Using a self-heterodyned electro-optic comb setup, we separate positive and negative sideband amplitudes and compare to an equivalent comb-free system. These data report EIT measurement with the comb system, local spectra around two comb teeth - one within and one outside the EIT line, and normalized minimum detectable RF signal field as a function of RF intermediate frequency used to evaluate the instantaneous bandwidth of the single frequency, positive sideband, and negative sideband datasets.

In this paper, we have demonstrated the importance of choosing the correct reference plane for applications such as over-the-air (OTA) modulated-signal measurements at millimeter-wave frequencies. We have employed a modulated-signal source at 44 GHz for this demonstration. The measurements have been performed using NIST's calibrated sampling oscilloscope and are traceable to the primary standards. The EVM values and distributions are obtained after complete uncertainty analyses. The source and oscilloscope mismatch measurements have been performed on a vector network analyzer (VNA) and are also shown here after complete uncertainty analyses. Each dataset shown in the paper has been obtained after running 1000 Monte-Carlo simulations.

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Data published in paper "Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz"We investigated the effect of two uncertainty sources, probe placement error and capacitance per unit length variation, on transistor S-parameter measurements calibrated with two different mTRL calibration kits. We propagated these uncertainties onto common-emitter (CE) and common-base (CB) heterojunction-bipolar-transistor (HBT) measurements to show how the calibration kit selection affects the accuracy of the resulting S-parameter transistor measurements and calculated characterization metrics such as K factor and maximum available gain (MAG). The measured data are from Sparameters taken from a Vector Network Analyzer (VNA). We used WR3.4 extender heads connected to a VNA and measured S-parameters from 210 GHz to 325 GHz with a 500 MHz frequency step. The probes were landed manually for each of calibration standard measurements and transistor measurements with an approximate probe landing error of +/- 10 um. Each raw measurement was stored and corrected later in post-processing using the mTRL calibration algorithm in the Microwave Uncertainty Framework (MUF). In this dataset, we also included the capacitance per unit length from a commercial Electromagnetic (EM) solver of the two transmission line cross sections used in the calibration kits. We varied the geometric and material properties of the transmission lines to obtain the histograms.

Millimeter-wave channel sounders are much more sensitive to phase drift than their microwave counterparts by virtue of shorter wavelength. This matters when coherently combining untethered channel measurements ? scanned over multiple antennas either electronically or mechanically in seconds, minutes, or even hours ? to obtain directional information. To eliminate phase drift, a synchronization cable between the transmitter and receiver is required, limiting deployment range and flexibility indoors, and precluding most outdoor and mobile scenarios. Instead, we propose a blind technique to calibrate for phase drift by post-processing the channel measurements; the technique is referred to as blind because it requires no reference signal and, as such, works even in non-line-of-sight conditions when the (reference) direct path goes undetected. To substantiate the technique, it was tested on real measurements collected with our 60-GHz virtual phased-array channel sounder, as well as through simulation. The technique was demonstrated robust enough to deal with the most severe case of phase drift (uniformly distributed phase) and in non-line-of-sight conditions.

data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters.

data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters.

This data set consists of both measured and simulated optical intensities scattered off periodic line arrays, with simulations based upon an average geometric model for these lines. These data were generated in order to determine the average feature sizes based on optical scattering, which is an inverse problem for which solutions to the forward problem are calculated using electromagnetic simulations after a parameterization of the feature geometry. Here, the array of features measured and modeled is periodic in one-dimension (i.e., a line grating) with a nominal line width of 100 nm placed at 300 nm intervals, or pitch = 300 nm; the short-hand label for the features is "L100P300." The entirety of the modeled data is included, over two thousand simulations that are indexed using a top, middle, and bottom linewidth as floating parameters. Two subsets of these data, featuring differing sampling strategies, are also provided. This data set also contains angle-resolved optical measurements with uncertainties for nine arrays which differ in their dimensions due to lithographic variations using a focus/exposure matrix, as identified in a previous publication (https://doi.org/10.1117/12.777131). We have previously reported line widths determined from these measurements based upon non-linear regression to compare theory to experiment. Machine learning approaches are to be fostered for solving such inverse problems. Data are formatted for direct use in "Model-Based Optical Metrology in R: MoR" software which is also available from data.nist.gov. (https://doi.org/10.18434/T4/1426859). Note: Certain commercial materials are identified in this dataset in order to specify the experimental procedure adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials are necessarily the best available for the purpose.