The NIST Electron Inelastic-Mean-Free-Path Database provides values of electron inelastic mean free paths (IMFPs) principally for use in surface analysis by Auger-electron spectroscopy and X-ray photoelectron spectroscopy. The database includes IMFPs calculated from experimental optical data and IMFPs measured by elastic-peak electron spectroscopy. If no calculated or measured IMFPs are available for a material of interest, values can be estimated from the predictive IMFP formulae of Tanuma et al. and of Gries. IMFPs are available for electron energies between 50 eV and 10,000 eV although most of the available data are for energies less than 2,000 eV. A critical review of calculated and measured IMFPs has been published [C. J. Powell and A. Jablonski, J. Phys. Chem. Ref. Data 28, 19 (1999)].

The NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA) can be used to simulate Auger-electron spectra and X-ray photoelectron spectra of nanostructures such as islands, lines, spheres, and layered spheres on surfaces. As for earlier versions, such simulations can be performed for multilayer films. Users can specify the compositions and dimensions of each material in the sample structure as well as the measurement configuration. The database contains extensive physical data needed for quantitative interpretations of observed spectra. A more detailed description of SESSA has been published [W. Smekal, W. S. M. Werner, and C. J. Powell Surf. Interface Anal. 37, 1059 (2005)].

NIST X-ray Photoelectron Spectroscopy Database XPS contains over 33,000 data records that can be used for the identification of unknown lines, retrieval of data for selected elements (binding energy, Auger kinetic energy, chemical shift, and surface or interface core-level shift), retrieval of data for selected compounds (according to chemical name, selected groups of elements, or chemical classes), display of Wagner plots, and retrieval of data by scientific citation. For the newer data records, additional information is provided on the specimen material, the conditions of measurement, and the analysis of the data. Version 5.0 includes the addition of Digital Object Identifiers (DOI) to each of the citations. Additionally, Version 5.0 has new features including chemical shift plots, custom-built components for displaying both formatted molecular formulas and formatted spectral lines, and spectral sorting functions of photoelectron lines and Auger Parameters.

The NIST Electron Effective Attenuation Length Database provides values of electron effective attenuation lengths (EALs) in materials at user-selected electron energies between 50 eV and 2,000 eV. The database was designed mainly to provide EALs (to account for effects of elastic-electron scattering) for measurements of the thicknesses of overlayer films and, to a much lesser extent, for measurements of the depths of thin marker layers. EALs are calculated using an algorithm based on electron transport theory for measurement conditions specified by the user. A critical review on the EAL has been published [A. Jablonski and C. J. Powell, Surf. Science Reports 47, 33 (2002)], and simple practical expressions for the EAL, mean escape depth, and information depth are given in another paper by the same authors [J. Vac. Sci. Technol. A 27, 253 (2009)].

**** Note that this SRD is superseded by SRD 64 Version 4.0. ****The NIST Electron Elastic-Scattering Cross-Section Database provides values of differential elastic-scattering cross sections, total elastic-scattering cross sections, phase shifts, and transport cross sections in electron-atom scattering for elements with atomic numbers from 1 to 96 and for electron energies between 50 eV and 300 keV (in steps of 1 eV). Knowledge of elastic-scattering effects is important for the development of theoretical models for quantitative analysis by Auger-electron spectroscopy, X-ray photoelectron spectroscopy, electron microprobe analysis, and analytical electron microscopy. These data are also needed for modeling of electron transport in radiation dosimetry, electron-beam lithography, and interactions of ionizing radiation with matter. The database is designed to facilitate simulations of electron transport for these and similar applications in which electron energies from 50 eV to 300 keV are utilized.An analysis of available elastic-scattering cross-section data has been published [A. Jablonski, F. Salvat, and C. J. Powell, J. Phys. Chem. Ref. Data 33, 409 (2004)].

Note that this SRD supersedes SRD 64 Version 3.2. The NIST Electron Elastic-Scattering Cross-Section Database provides values of differential elastic-scattering cross sections, total elastic-scattering cross sections, phase shifts, and transport cross sections in electron-atom scattering for elements with atomic numbers from 1 to 96 and for electron energies between 50 eV and 300 keV (in steps of 1 eV). Knowledge of elastic-scattering effects is important for the development of theoretical models for quantitative analysis by Auger-electron spectroscopy, X-ray photoelectron spectroscopy, electron microprobe analysis, and analytical electron microscopy. These data are also needed for modeling of electron transport in radiation dosimetry, electron-beam lithography, and interactions of ionizing radiation with matter. The database is designed to facilitate simulations of electron transport for these and similar applications in which electron energies from 50 eV to 300 keV are utilized. An analysis of available elastic-scattering cross-section data has been published [A. Jablonski, F. Salvat, and C. J. Powell, J. Phys. Chem. Ref. Data 33, 409 (2004)].

This database provides values of backscattering correction factors (BCF) of homogeneous materials for quantitative surface analyses by Auger electron spectroscopy. These BCFs are obtained from Monte Carlo simulations based on two models of electron transport in the material, a simplified model and an advanced model [A. Jablonski and C. J. Powell, Surf. Science 604, 1928 (2010)]. One assumption for the former model is that the primary-electron beam is unchanged, in intensity, energy or direction, within the information depth for Auger-electron emission. This assumption becomes progressively less useful as the primary energy becomes closer to the core-level ionization energy for the relevant Auger transition or for increasing angles of incidence of the primary electrons.

The NIST Database of Cross Sections for Inner-Shell Ionization by Electron or Positron Impact provides cross sections for ionization of the K shell and of the L and M subshells of neutral atoms of the elements, from hydrogen to einsteinium, by electrons or positrons, for projectile energies from the ionization threshold to 1 GeV. These cross sections were calculated from a combination of the relativistic distorted-wave and the plane-wave Born approximations. Extensive comparisons have been made of the calculated cross sections for inner-shell ionization by electron impact with available experimental data that satisfied mutual-consistency checks. These comparisons showed that the overall root-mean-square deviation between measured and calculated cross sections was 10.9 % [X. Llovet, C. J. Powell, A. Jablonski, and F. Salvat, J. Phys. Chem. Ref. Data 43, 013102 (2014)].

These are the unprocessed electron back scatter diffraction patterns (EBSPs) collected from the mesas of electron beam induced deposition (EBID) material, in addition to the Mathematica notebook used to process the images. Each of the 12 EBID mesa has 10 EBSPs collected at 20 kV and 10 kV, in addition to several longer line scans that step from the silicon substrate onto the EBID mesa.

CO2 is studied using dispersed synchrotron radiation in the 650 Å and 840 Å spectral region. The vibrationally resolved photoelectron spectra are analyzed to generate relative vibrational transition amplitudes and the angular asymmetry parameters describing the various transitions observed.