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Data for "Direct detection of the ∼ 8.4 eV internal conversion energy of 229mTh embedded in a superconducting nanowire"
Data for "Direct detection of the ∼ 8.4 eV internal conversion energy of 229mTh embedded in a superconducting nanowire"
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연관 데이터
Data for "Direct detection of the ∼ 8.4 eV internal conversion energy of 229mTh embedded in a superconducting nanowire"
공공데이터포털
Data for "Direct detection of the ∼ 8.4 eV internal conversion energy of 229mTh embedded in a superconducting nanowire"
Data for "A 64-pixel mid-infrared single-photon imager based on superconducting nanowire detectors"
공공데이터포털
Numerical values of all data points shown in figures for manuscript "A 64-pixel mid-infrared single-photon imager based on superconducting nanowire detectors", available on arXiv (https://arxiv.org/abs/2309.16890)and in Applied Physics Letters 124, 042602, (2024) (https://doi.org/10.1063/5.0178931).
Data for "Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout"
공공데이터포털
Numerical values of all data points shown in figures for manuscript "Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout", available on arXiv at https://arxiv.org/abs/2302.01462Manuscript in press at Applied Physics Letters.
Data for "Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout"
공공데이터포털
Numerical values of all data points shown in figures for manuscript "Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout", available on arXiv at https://arxiv.org/abs/2302.01462Manuscript in press at Applied Physics Letters.
NIST High Temperature Superconducting (HTS) Materials Database - SRD 62
공공데이터포털
The NIST WWW High Temperature Superconductors database (WebHTS) provides evaluated thermal, mechanical, and superconducting property data for oxide superconductors. The range of materials covers the major series of compounds derived from the Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O, Tl-Sr-Ca-Cu-O, and La-Cu-O chemical families, along with numerous other variants of the cuprate and bismuthate materials that are known to have superconducting phases. The materials are described by specification and characterization information that includes processing details and chemical compositions. Physical characteristics such as density and crystal structure are given in numeric tables. All measured values are evaluated and supported by descriptions of the measurement methods, procedures, and conditions. In all cases, the sources of the data are fully documented in a comprehensive bibliography.
Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "
공공데이터포털
Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.
Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "
공공데이터포털
Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.
Data for "Trap-integrated superconducting nanowire single-photon detectors for trapped-ion qubit state readout"
공공데이터포털
Numerical values of all data points shown in figures for manuscript "Trap-integrated superconducting nanowire single-photon detectors for trapped-ion qubit state readout", Proc. SPIE 13025, Advanced Photon Counting Techniques XVIII, 1302506 (7 June 2024); https://doi.org/10.1117/12.3014455
Characterization of a Frequency Converter Based on a Superconducting Coplanar Waveguide, IMS 2024
공공데이터포털
We plan to present a technique for implementing a frequency doubler in NbTiN on silicon for operation in a cryogenic environment at IMS 2024. The kinetic inductance of a superconducting coplanar waveguide is exploited for efficient frequency conversion, while the fabrication allows for co-location with other cryogenic circuits. A conversion efficiency greater than 10% is demonstrated at a frequency of 9.87 GHz, offering lower input power requirements and competitive conversion efficiencies relative to other state-of-the-art solutions. This dataset contains information related to this presentation, specifically: (Fig. 2) Simulated conversion efficiency result, (Fig. 4) 2nd and 3rd order harmonic conversion efficiency data with input RF power ranging from (3 to 7), and (Fig. 5) second harmonic power as a function of dc bias current.
Characterization of a Frequency Converter Based on a Superconducting Coplanar Waveguide, IMS 2024
공공데이터포털
We plan to present a technique for implementing a frequency doubler in NbTiN on silicon for operation in a cryogenic environment at IMS 2024. The kinetic inductance of a superconducting coplanar waveguide is exploited for efficient frequency conversion, while the fabrication allows for co-location with other cryogenic circuits. A conversion efficiency greater than 10% is demonstrated at a frequency of 9.87 GHz, offering lower input power requirements and competitive conversion efficiencies relative to other state-of-the-art solutions. This dataset contains information related to this presentation, specifically: (Fig. 2) Simulated conversion efficiency result, (Fig. 4) 2nd and 3rd order harmonic conversion efficiency data with input RF power ranging from (3 to 7), and (Fig. 5) second harmonic power as a function of dc bias current.