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Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz
Data published in paper "Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz"We investigated the effect of two uncertainty sources, probe placement error and capacitance per unit length variation, on transistor S-parameter measurements calibrated with two different mTRL calibration kits. We propagated these uncertainties onto common-emitter (CE) and common-base (CB) heterojunction-bipolar-transistor (HBT) measurements to show how the calibration kit selection affects the accuracy of the resulting S-parameter transistor measurements and calculated characterization metrics such as K factor and maximum available gain (MAG). The measured data are from Sparameters taken from a Vector Network Analyzer (VNA). We used WR3.4 extender heads connected to a VNA and measured S-parameters from 210 GHz to 325 GHz with a 500 MHz frequency step. The probes were landed manually for each of calibration standard measurements and transistor measurements with an approximate probe landing error of +/- 10 um. Each raw measurement was stored and corrected later in post-processing using the mTRL calibration algorithm in the Microwave Uncertainty Framework (MUF). In this dataset, we also included the capacitance per unit length from a commercial Electromagnetic (EM) solver of the two transmission line cross sections used in the calibration kits. We varied the geometric and material properties of the transmission lines to obtain the histograms.
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Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz
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Data published in paper "Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz"We investigated the effect of two uncertainty sources, probe placement error and capacitance per unit length variation, on transistor S-parameter measurements calibrated with two different mTRL calibration kits. We propagated these uncertainties onto common-emitter (CE) and common-base (CB) heterojunction-bipolar-transistor (HBT) measurements to show how the calibration kit selection affects the accuracy of the resulting S-parameter transistor measurements and calculated characterization metrics such as K factor and maximum available gain (MAG). The measured data are from Sparameters taken from a Vector Network Analyzer (VNA). We used WR3.4 extender heads connected to a VNA and measured S-parameters from 210 GHz to 325 GHz with a 500 MHz frequency step. The probes were landed manually for each of calibration standard measurements and transistor measurements with an approximate probe landing error of +/- 10 um. Each raw measurement was stored and corrected later in post-processing using the mTRL calibration algorithm in the Microwave Uncertainty Framework (MUF). In this dataset, we also included the capacitance per unit length from a commercial Electromagnetic (EM) solver of the two transmission line cross sections used in the calibration kits. We varied the geometric and material properties of the transmission lines to obtain the histograms.
On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz
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data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters.
On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz
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data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters.
Data for "Characterizing Interconnects to 325 GHz" to be submitted to "Transactions on Microwave Theory and Techniques"
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Included here are figures and other relevant data from the paper "Characterizing Interconnects to 325 GHz". Abstract: We developed an interconnect characterization procedure that first embeds the interconnect into the error boxes of a multiline thru-reflect-line calibration and subsequently de-embeds the interconnect with a multi-tiered calibration. We experimentally validated our method with distributed contactless interconnects in the form of broadside coupled coplanar waveguides as a test case. We find excellent agreement between experiment, full-wave simulations, and a distributed model of contactless interconnects. This work provides a rigorous method to accurately characterize interconnects when conventional approaches are not applicable.
Recommended Practices for Calibrated Millimeter-Wave Modulated-Signal Measurements
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In this paper, we have demonstrated the importance of choosing the correct reference plane for applications such as over-the-air (OTA) modulated-signal measurements at millimeter-wave frequencies. We have employed a modulated-signal source at 44 GHz for this demonstration. The measurements have been performed using NIST's calibrated sampling oscilloscope and are traceable to the primary standards. The EVM values and distributions are obtained after complete uncertainty analyses. The source and oscilloscope mismatch measurements have been performed on a vector network analyzer (VNA) and are also shown here after complete uncertainty analyses. Each dataset shown in the paper has been obtained after running 1000 Monte-Carlo simulations.
Electromagnetic Interference Measurements from Tungsten Inert Gas (TIG) Arc Welding
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The 2.4 GHz ISM band is shared by Wi-Fi, Bluetooth, Wireless HART, ISA100.11a, and several other industrial wireless systems. Our dataset contains comprehensive electromagnetic interference (EMI) measurements from TIG welding processes conducted in the NIST fabrication shop. The measurements were taken using a typical arc welding power source and recorded at three distinct frequencies: 900 MHz, 2.4 GHz, and 5.3 GHz. The data collection was performed with a bandwidth of 160 MHz and a sample rate of 625 MHz, providing high-resolution insights into the EMI characteristics during the welding operations. This dataset may be useful for understanding the EMI behavior in TIG welding and can be instrumental in developing interference mitigation strategies, aiding in RF band selection and frequency planning, and improving welding technology and regulations.Disclaimer: Certain commercial equipment, instruments, or materials are identified in this publication in order to describe the experimental procedures and data adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.
Radio Frequency Interference Measurements of Industrial Machinery
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The 2.4 GHz ISM band is shared by Wi-Fi, Bluetooth, Wireless HART, ISA100.11a, and several other industrial wireless systems. Our dataset contains comprehensive electromagnetic interference (EMI) measurements from machinery taken in various industrial environments. The measurements were taken at two frequencies: 900 MHz, 2.4 GHz. This dataset may be useful for understanding EMI emitters in factories and can be instrumental in developing interference mitigation strategies, aiding in RF band selection and enterprise frequency planning, improving wireless technology, and informing communications standardization activities such as the IEEE 3388 industrial wireless performance evaluation standard.The interference measurements were taken in the following types of industrial environments:1) Infrared Curing Machine: Curing process using infrared radiation producing EMI across the 2.4 GHz band, 2) Crane with an Unshielded VFD: Overhead gantry crane operating at 900 MHz with an unshielded variable frequency drive (VFD) causing broadband interference, 3) Microwave Dryer: Two independent sets of measurements of a microwave oven baking machines used for a ceramic drying process. Multiple magnetrons are used with a power output of 1100 Watts each, 4) Unidentified Interference: General recording of the 2400 MHz band capturing both wireless network traffic and an unidentified broadband RFI emitter possibly caused by an unshielded VFD.NIST Disclaimer: Certain commercial equipment, instruments, or materials are identified in this publication in order to describe the experimental procedures and data adequately. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.
Calibration Data for Wafer 2 of SRM 3461 - MEMS Cantilever Stiffness
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SRM 3461 is an AFM sized chip with an array of seven cantilevers on each chip. The uniformity of the chips offered for sale from wafer 2 is excellent and the SRM certificate reports values and uncertainties for the entire lot of chips for sale; however, this dataset provides the raw data used to certify the SRM. Since each chip is serialized, the raw data for a specific SRM chip can be accessed from this dataset. In addition to the laser Doppler vibrometry data and optical micrograph, this dataset contains the Mathematica code used to process the data. This code reads the binary file formats from the Polytec.pvd files and calculates vibration spectra and fitted peak values that are then exported into the Excel files that are being made available for each chip.
A Tunable 220 GHz Comb Generator Realized with an Ultrawideband Mixer in a InP HBT Technology
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data published in paper "A Tunable 220 GHz Comb Generator Realized with an Ultrawideband Mixer in a InP HBT Technology"
Data for "Coherent Optical Clock Down-Conversion for Microwave Frequencies with 10-18 Instability"
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This data was used for main results for the paper entitled "Coherent Optical Clock Down-Conversion for Microwave Frequencies with 10-18 Instability". We could calculate relative phase fluctuation and Allan deviation for both Yb optical clocks and 10 GHz microwaves. Uncertainty of our down-conversion system was also calculated from this.