Fused silica has become an interesting alternative to silicon for millimeter-wave (mmWave) applications. Unfortunately, there are few reports on the measurement of fused silica’s permittivity above 110 GHz that use electrical rather than optical methods. Given that mmWave applications use electrical circuits, additional electrical data would be useful to industry. To test the feasibility of electrical methods, we applied on-wafer techniques based on coplanar waveguide transmission lines to measure the complex permittivity of fused silica to 325 GHz. Our approach used the multiline thru reflect line algorithm on the scattering parameter measurements of transmission lines. Our method combined these results with dc measurements of the resistivity of the metals, simulations of the coplanar waveguide cross section, and dimensional metrology. The resulting complex permittivity was epsilon_r = 3.87±0.03 and a loss tangent tan_delta < 0.005 from 320 MHz to 325 GHz. To support our conclusions, we performed an uncertainty analysis considering relevant sources of uncertainty. In the broader context, these results show that fused silica is a suitable substrate for mmWave electronics where the loss tangent must be less than 0.005 up to 325 GHz.

The effect of the crystallographic orientation on the primary and secondary phase transformations of single-crystal silicon (Si) during indentation was investigated in a statistical instrumented-indentation study using a spherical diamond probe with a nominal tip radius of 5 µm. The primary phase transformation from the Si-I to Si-II phase were initiated above a threshold pressure during loading and assumed to be reflected as change in slope or a plateau-like discontinuity in the loading curve (pop-in event). Secondary transformations to polycrystalline high-pressure phases (Si-XII and Si-III) and/or amorphous Si (a-Si) occurred during unloading. It is believed that elbow events correspond to the presence of a-Si; pop-out and kink pop-out events were associated with Si-XII and Si-III phases. The presence of and the pressure at which phase-transformation events occurred during indentation were analyzed and compared for three crystallographic orientations: Si(001), Si(110), and Si(111).In load sequence indentations, the applied maximum force was varied from (20, 25, 30, 45, 60, 80, 100, 150 to 200) mN to study its effect on the phase transformation for the three orientations. In these tests, the force was increased and decreased at fixed (un)loading rates of 5 mN/s. For the majority of the tests, the maximum force was held constant for 5 s before unloading. In selected tests, the force was immediately decreased after reaching its maximum value. For each maximum force, 50 indentation tests were performed.In the partial-unload series, indentations were carried out in the multiple partial unloading technique to study the onset of the primary phase transformation during loading. In this technique, the force was stepwise increased, but before continuing to the next, greater, force value, the force was partially released. The resulting force-displacement curve had two branches corresponding to the fully loaded and partially unloaded state. For elastic deformation, the two branches coincided, but they diverged on plastic deformation, which was associated with the start of the primary phase transformation for Si. The maximum indentation forces applied was 50 mN or 100 mN (in a few selected tests on Si(001)). For each orientation, 50 indentation tests were performed.The indentation moduli of the three Si orientations were determined at maximum indentation loads guaranteeing a purely elastic response of the materials: 20 mN for Si(001) respective 15 mN for Si(110) and Si(111). In each test, the indentation force was linearly increased to the maximum value, then held constant for 5 s and afterwards linearly decreased. The (un)loading rates were fixed at 5 mN/s. For each orientation, 25 indentation tests were performed.The raw experimental indentation data collected in this study are compiled in datasets A through E of this data publication. In this context, raw indentation data are defined as being direct from the instrument corrected for machine compliance and thermal drift. Note: Outliers in indentation curves were not included in the data sets.The aforementioned indentation datasets built the foundation of and serve as companion to the paper: Y.B Gerbig, S.J. Stranick, D.J. Morris, M.D. Vaudin, R.F. Cook, J. Mater. Res. 24/3, 1172 - 1183 (2009) https://doi.org/10.1557/jmr.2009.0122.More details about data collection and processing than already described in this summary can be found in the paper. Data directly underlying figures 1, 2, 3, 5, and 6 of the companion paper are compiled in datasets F through J of this data publication. The accompanying Readme document contains details about organization, content and format of the individual data sets.

The effect of the crystallographic orientation on the primary and secondary phase transformations of single-crystal silicon (Si) during indentation was investigated in a statistical instrumented-indentation study using a spherical diamond probe with a nominal tip radius of 5 µm. The primary phase transformation from the Si-I to Si-II phase were initiated above a threshold pressure during loading and assumed to be reflected as change in slope or a plateau-like discontinuity in the loading curve (pop-in event). Secondary transformations to polycrystalline high-pressure phases (Si-XII and Si-III) and/or amorphous Si (a-Si) occurred during unloading. It is believed that elbow events correspond to the presence of a-Si; pop-out and kink pop-out events were associated with Si-XII and Si-III phases. The presence of and the pressure at which phase-transformation events occurred during indentation were analyzed and compared for three crystallographic orientations: Si(001), Si(110), and Si(111).In load sequence indentations, the applied maximum force was varied from (20, 25, 30, 45, 60, 80, 100, 150 to 200) mN to study its effect on the phase transformation for the three orientations. In these tests, the force was increased and decreased at fixed (un)loading rates of 5 mN/s. For the majority of the tests, the maximum force was held constant for 5 s before unloading. In selected tests, the force was immediately decreased after reaching its maximum value. For each maximum force, 50 indentation tests were performed.In the partial-unload series, indentations were carried out in the multiple partial unloading technique to study the onset of the primary phase transformation during loading. In this technique, the force was stepwise increased, but before continuing to the next, greater, force value, the force was partially released. The resulting force-displacement curve had two branches corresponding to the fully loaded and partially unloaded state. For elastic deformation, the two branches coincided, but they diverged on plastic deformation, which was associated with the start of the primary phase transformation for Si. The maximum indentation forces applied was 50 mN or 100 mN (in a few selected tests on Si(001)). For each orientation, 50 indentation tests were performed.The indentation moduli of the three Si orientations were determined at maximum indentation loads guaranteeing a purely elastic response of the materials: 20 mN for Si(001) respective 15 mN for Si(110) and Si(111). In each test, the indentation force was linearly increased to the maximum value, then held constant for 5 s and afterwards linearly decreased. The (un)loading rates were fixed at 5 mN/s. For each orientation, 25 indentation tests were performed.The raw experimental indentation data collected in this study are compiled in datasets A through E of this data publication. In this context, raw indentation data are defined as being direct from the instrument corrected for machine compliance and thermal drift. Note: Outliers in indentation curves were not included in the data sets.The aforementioned indentation datasets built the foundation of and serve as companion to the paper: Y.B Gerbig, S.J. Stranick, D.J. Morris, M.D. Vaudin, R.F. Cook, J. Mater. Res. 24/3, 1172 - 1183 (2009) https://doi.org/10.1557/jmr.2009.0122.More details about data collection and processing than already described in this summary can be found in the paper. Data directly underlying figures 1, 2, 3, 5, and 6 of the companion paper are compiled in datasets F through J of this data publication. The accompanying Readme document contains details about organization, content and format of the individual data sets.

This Standard Reference Material (SRM) is intended for use as a primary calibration standard for the quantitative determination of silicon. A unit of SRM 3150 consists of 50 mL of solution prepared gravimetrically to contain a known mass fraction of silicon in a high-density polyethylene bottle sealed in an aluminized bag. The solution is prepared gravimetrically from sodium metasilicate nonahydrate to contain a known mass fraction of silicon in water. This data is public in the Certificate of Analysis for this material.

Figures and relevant data from the paper "Broadband Electromagnetic Properties of Engineered Flexible Absorber Materials" are found here . The paper was published on Advanced Materials Technologies in 2023. ABSTRACT: Flexible and stretchable materials have attracted significant interest for applications in wearable electronics and bioengineering fields. Recent developments also incorporate mounted and embedded microwave circuits, components, and systems with engineered flexible materials that operate over a broadband frequency range (~1 to 100 GHz). Here we demonstrate a simple, low-cost, flip-chip technique where flexible materials are placed on top of coplanar waveguide (CPW) transmission lines for material property measurement. We apply on-wafer error correction and de-embedding techniques to determine broadband electromagnetic properties of the material-loaded transmission line segments. Finite-element simulations of material-loaded devices were employed along with the broadband measurements to estimate the electromagnetic material properties. To demonstrate this technique, we fabricated flexible polydimethylsiloxane (PDMS) composites with varying concentrations of Barium Hexaferrite (BaM) nanoparticles for potential applications in electromagnetic shielding and quantified the complex permittivity and permeability of the composites up to 110 GHz using our broadband scattering-parameter measurements. We fit the frequency-dependent permeability to models describing the ferromagnetic resonance of barium hexaferrite (BaM) nanoparticles in PDMS and estimated the constituent nanoparticle properties using the Maxwell-Garnett mixing model. This study paves way to exploit a wide range of engineered materials in flexible, wearable, and biomedical electronics applications and presents a convenient methodology to extract important broadband electromagnetic properties for applications such as electromagnetic shielding.

data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters.

data published in paper "On-Wafer Device Characterization Including Uncertainty Estimates to 1.0 THz"This dataset contains the calibrated scattering parameters (S-parameters) of a thru that was not used in calibration, and the simulated and calibrated S-parameters for series and shunt capacitors for both technology 1 and technology 2. It also contains the simulated and extracted capacitance from these S-parameters of the series and shunt capacitors. It contains the simulated and extracted capacitance for the shunt capacitor from one site in technology 1 and 95% prediction intervals (uncertainties) from electronic variation in the vector network analyzer (VNA), probe placement error, and the capacitance per unit length correction variation. Finally, it contains the extracted capacitance for multiple sites for the shunt capacitor in technology 1. All simulated S-parameters obtained using a 2.5D method of moments commercial solver. Simulated capacitance obtained from the simulated S-parameters.

Thermal conductivity data acquired previously for the establishment of Standard Reference Material (SRM) 1450, Fibrous Glass Board, as well as subsequent renewals 1450a, 1450b, 1450c, and 1450d, are re-analyzed collectively and as individual data sets. Additional data sets for proto-1450 material lots are also included in the analysis (eleven data sets in total). The data cover the years 1958 to 2009; 52 years of activity by the National Institute of Standards and Technology (NIST) in developing and providing thermal insulation SRMs, specifically high-density molded fibrous-glass board, to the public. Collectively, the data sets cover two nominal thicknesses of 13 mm and 25 mm, bulk densities from 60 kg/m3 to 180 kg/m3, and mean temperatures from 100 K to 340 K. The prevailing generic model for the majority of data sets is the bilinear model in density and temperature. The regression equations are not intended to be, and cannot be, used to "re-certify" any of these previous SRMs. The results of this analysis, instead, aim to enhance our understanding of the original certificate equations derived by previous NIST (formerly the National Bureau of Standards) researchers as well as to improve the development and modeling of future thermal insulation SRMs.

This data set contains data used to generate plots in the paper "Microwave Characterization of Parylene C Dielectric and Barrier Properties".It contains the broadband S-parameter measurements of Parylene C coated CPWs exposed to water and ionic fluid, simulation set-up files and RLCG results, formatted data for each of the plots, and scripts to generate each figure.Simulations must be opened using ANSYS Electronics Desktop.Scripts must be executed using MATLAB.See readme file for complete description of each individual file.

This data set contains data used to generate plots in the paper "Microwave Characterization of Parylene C Dielectric and Barrier Properties".It contains the broadband S-parameter measurements of Parylene C coated CPWs exposed to water and ionic fluid, simulation set-up files and RLCG results, formatted data for each of the plots, and scripts to generate each figure.Simulations must be opened using ANSYS Electronics Desktop.Scripts must be executed using MATLAB.See readme file for complete description of each individual file.