The effect of the crystallographic orientation on the primary and secondary phase transformations of single-crystal silicon (Si) during indentation was investigated in a statistical instrumented-indentation study using a spherical diamond probe with a nominal tip radius of 5 µm. The primary phase transformation from the Si-I to Si-II phase were initiated above a threshold pressure during loading and assumed to be reflected as change in slope or a plateau-like discontinuity in the loading curve (pop-in event). Secondary transformations to polycrystalline high-pressure phases (Si-XII and Si-III) and/or amorphous Si (a-Si) occurred during unloading. It is believed that elbow events correspond to the presence of a-Si; pop-out and kink pop-out events were associated with Si-XII and Si-III phases. The presence of and the pressure at which phase-transformation events occurred during indentation were analyzed and compared for three crystallographic orientations: Si(001), Si(110), and Si(111).In load sequence indentations, the applied maximum force was varied from (20, 25, 30, 45, 60, 80, 100, 150 to 200) mN to study its effect on the phase transformation for the three orientations. In these tests, the force was increased and decreased at fixed (un)loading rates of 5 mN/s. For the majority of the tests, the maximum force was held constant for 5 s before unloading. In selected tests, the force was immediately decreased after reaching its maximum value. For each maximum force, 50 indentation tests were performed.In the partial-unload series, indentations were carried out in the multiple partial unloading technique to study the onset of the primary phase transformation during loading. In this technique, the force was stepwise increased, but before continuing to the next, greater, force value, the force was partially released. The resulting force-displacement curve had two branches corresponding to the fully loaded and partially unloaded state. For elastic deformation, the two branches coincided, but they diverged on plastic deformation, which was associated with the start of the primary phase transformation for Si. The maximum indentation forces applied was 50 mN or 100 mN (in a few selected tests on Si(001)). For each orientation, 50 indentation tests were performed.The indentation moduli of the three Si orientations were determined at maximum indentation loads guaranteeing a purely elastic response of the materials: 20 mN for Si(001) respective 15 mN for Si(110) and Si(111). In each test, the indentation force was linearly increased to the maximum value, then held constant for 5 s and afterwards linearly decreased. The (un)loading rates were fixed at 5 mN/s. For each orientation, 25 indentation tests were performed.The raw experimental indentation data collected in this study are compiled in datasets A through E of this data publication. In this context, raw indentation data are defined as being direct from the instrument corrected for machine compliance and thermal drift. Note: Outliers in indentation curves were not included in the data sets.The aforementioned indentation datasets built the foundation of and serve as companion to the paper: Y.B Gerbig, S.J. Stranick, D.J. Morris, M.D. Vaudin, R.F. Cook, J. Mater. Res. 24/3, 1172 - 1183 (2009) https://doi.org/10.1557/jmr.2009.0122.More details about data collection and processing than already described in this summary can be found in the paper. Data directly underlying figures 1, 2, 3, 5, and 6 of the companion paper are compiled in datasets F through J of this data publication. The accompanying Readme document contains details about organization, content and format of the individual data sets.

The effect of the crystallographic orientation on the primary and secondary phase transformations of single-crystal silicon (Si) during indentation was investigated in a statistical instrumented-indentation study using a spherical diamond probe with a nominal tip radius of 5 µm. The primary phase transformation from the Si-I to Si-II phase were initiated above a threshold pressure during loading and assumed to be reflected as change in slope or a plateau-like discontinuity in the loading curve (pop-in event). Secondary transformations to polycrystalline high-pressure phases (Si-XII and Si-III) and/or amorphous Si (a-Si) occurred during unloading. It is believed that elbow events correspond to the presence of a-Si; pop-out and kink pop-out events were associated with Si-XII and Si-III phases. The presence of and the pressure at which phase-transformation events occurred during indentation were analyzed and compared for three crystallographic orientations: Si(001), Si(110), and Si(111).In load sequence indentations, the applied maximum force was varied from (20, 25, 30, 45, 60, 80, 100, 150 to 200) mN to study its effect on the phase transformation for the three orientations. In these tests, the force was increased and decreased at fixed (un)loading rates of 5 mN/s. For the majority of the tests, the maximum force was held constant for 5 s before unloading. In selected tests, the force was immediately decreased after reaching its maximum value. For each maximum force, 50 indentation tests were performed.In the partial-unload series, indentations were carried out in the multiple partial unloading technique to study the onset of the primary phase transformation during loading. In this technique, the force was stepwise increased, but before continuing to the next, greater, force value, the force was partially released. The resulting force-displacement curve had two branches corresponding to the fully loaded and partially unloaded state. For elastic deformation, the two branches coincided, but they diverged on plastic deformation, which was associated with the start of the primary phase transformation for Si. The maximum indentation forces applied was 50 mN or 100 mN (in a few selected tests on Si(001)). For each orientation, 50 indentation tests were performed.The indentation moduli of the three Si orientations were determined at maximum indentation loads guaranteeing a purely elastic response of the materials: 20 mN for Si(001) respective 15 mN for Si(110) and Si(111). In each test, the indentation force was linearly increased to the maximum value, then held constant for 5 s and afterwards linearly decreased. The (un)loading rates were fixed at 5 mN/s. For each orientation, 25 indentation tests were performed.The raw experimental indentation data collected in this study are compiled in datasets A through E of this data publication. In this context, raw indentation data are defined as being direct from the instrument corrected for machine compliance and thermal drift. Note: Outliers in indentation curves were not included in the data sets.The aforementioned indentation datasets built the foundation of and serve as companion to the paper: Y.B Gerbig, S.J. Stranick, D.J. Morris, M.D. Vaudin, R.F. Cook, J. Mater. Res. 24/3, 1172 - 1183 (2009) https://doi.org/10.1557/jmr.2009.0122.More details about data collection and processing than already described in this summary can be found in the paper. Data directly underlying figures 1, 2, 3, 5, and 6 of the companion paper are compiled in datasets F through J of this data publication. The accompanying Readme document contains details about organization, content and format of the individual data sets.

Fabricate Si immersed gratings for IR (1150 – 6500 nm) spectroscopy to support ground-based, airborne, and space-based infrared spectrometers.
These devices offer substantial advantages in compactness, formatting, and efficiency over other dispersive devices and have 3.44 times the resolving power of a conventional front-surface device for a grating of a given size.
 

"We propose to continue our successful research program in developing x-ray microcalorimeter arrays for astrophysics. This development will directly benefit not only the International X-ray Observatory (IXO), but also other possible mission concepts. We will investigate various array and pixel optimizations such as would be needed for large arrays for surveys, or arrays of fast pixels optimized for neutron star burst spectroscopy. The main emphasis of our research will be the further development of arrays of superconducting transition-edge sensors (TES) for imaging x-ray spectroscopy. We have developed a TES pixel that achieves better than 2.5-eV resolution at 6 keV, and arrays of such pixels that are sufficiently uniform in characteristics as to permit common biasing without significant compromises in the operation of any pixel. We are also making arrays of position sensitive TES pixels that show promise for use on IXO. We propose to advance both the single-pixel and position-sensitive arrays so that we can produce arrays suitable for subsystem-level read-out demonstrations of the IXO X-ray Microcalorimeter Spectrometer focal plane. Additionally, we propose to re-evaluate out successful pixel design which, while certainly suitable for use in developing the architecture of arrays and addressing detector systems issues, is not necessarily the final optimization. The performance of a TES depends on the functional form of the current, temperature, and magnetic-field dependence of the resistive transition, and also on the noise at each point on this transition surface. The parameters that describe this transition surface occupy a large phase space, and we have only probed a small portion of it. We propose to fabricate a series of test devices to explore other parts of the phase space and to learn how to engineer the superconducting transition. Recently, our understanding of the physical effects governing the observed resistive transitions has improved, th

Microcalorimeter x-ray instruments are non-dispersive, high spectral resolution, broad-band, high cadence imaging spectrometers. We have been developing these instruments for x-ray astrophysics for over 25 years and have successfully flown them on both suborbital and orbital observatories. Microcalorimeter spectrometers are true spatial-spectral event-driven instruments. The core instrument for the Astro-H observatory to be launched in 2014 and for the International X-ray Observatory planned for around 2022 [1] are both microcalorimeter spectrometers. For the past two years, supported by the Solar and Heliospheric ROSES program, we have been adapting this highly successful technology to the very different requirements of solar physics. This leverages the large NASA investment in this technology to produce instruments optimized for solar physics with only a moderate development program.

During the past two years, we have developed a high spatial resolution, high cadence microcalorimeter optimized for solar observations with a ground-breaking spectral resolving power of nearly 3000 at 6 keV. This exceeds the performance goals of our program. In fact, the single-pixel performance achieved during this program is already sufficient for a solar optimized instrument as described in section 2, albeit using small arrays of detectors. We propose here to continue this successful program by developing large focal-plane arrays, optimized for solar physics and their read-out systems. This complements our existing development programs in astrophysics, where we have already produced and tested kilo-pixel arrays for IXO. The end-result of the proposed work will be a solar-optimized detector system proven and ready for integration into a suborbital payload and then onto a space-borne observatory. Both the suborbital program and an orbital instrument would allow high cadence spatial-spectral observations across the x-ray band from 0.1 to above 10 keV, enabling new science as described in section 1.4. Ultimately this will produce instrumentation suitable for deployment on an Explorer-class mission and, possibly, a remote sensing contribution to the Solar Energetic Particle Acceleration and Transport (SEPAT) Solar-Terrestrial Probe [2].  

Included here are figures and other relevant data from the paper "Distributed contactless interconnects for millimeter-wave heterogeneous integration", submitted to TMTT Letters. Abstract: State-of-the-art integrated circuits leverage dissimilar materials to optimize system performance. Such heterogeneous integration often involves multiple chips electrically coupled to one another via bump bonds or wire-bond interconnects. While these interconnects are a mature technology for low-frequency operation (< 100 GHz), they have stringent fabrication requirements and are prone to failure during operation in the terahertz range (300 GHz to 10 THz). Next-generation integrated circuits require alternative interconnect topologies that are less sensitive to fabrication tolerances and conditions, are more robust, and have superior high-frequency performance. Here, we demonstrate distributed coupling to 325 GHz between broadside-coupled coplanar waveguides without bump bonds, wire bonds, or direct metal-to-metal bonding. The insertion loss of these contactless interconnects was approximately 1.4 dB at the maximum in the passbands at 63 GHz, 93 GHz, and 120 GHz. This interconnect topology enables robust integration of low-cost silicon with high-speed compound semiconductors for terahertz communications networks to improve reliability and increase yield.

Included here are figures and other relevant data from the paper "Distributed contactless interconnects for millimeter-wave heterogeneous integration", submitted to TMTT Letters. Abstract: State-of-the-art integrated circuits leverage dissimilar materials to optimize system performance. Such heterogeneous integration often involves multiple chips electrically coupled to one another via bump bonds or wire-bond interconnects. While these interconnects are a mature technology for low-frequency operation (< 100 GHz), they have stringent fabrication requirements and are prone to failure during operation in the terahertz range (300 GHz to 10 THz). Next-generation integrated circuits require alternative interconnect topologies that are less sensitive to fabrication tolerances and conditions, are more robust, and have superior high-frequency performance. Here, we demonstrate distributed coupling to 325 GHz between broadside-coupled coplanar waveguides without bump bonds, wire bonds, or direct metal-to-metal bonding. The insertion loss of these contactless interconnects was approximately 1.4 dB at the maximum in the passbands at 63 GHz, 93 GHz, and 120 GHz. This interconnect topology enables robust integration of low-cost silicon with high-speed compound semiconductors for terahertz communications networks to improve reliability and increase yield.

ABDNavigator is software written for scanning probe (e.g. scanning tunneling microscope) control and sample navigation of atom-based devices. Here atom-based devices refer to devices whose components span from the micron scale range down to sub nanometer and are probed, and typically fabricated by scanning tunneling microscope.

,W okresie od lipca 2018 do września 2021 w Mikrostyk SA realizowany był projekt badawczo – rozwojowy dofinansowany z funduszy europejskich w ramach programu operacyjnego Inteligentny Rozwój. Rolę instytucji pośredniczącej pełniło Narodowe Centrum Badań i Rozwoju. Celem projektu było opracowanie innowacyjnego procesu prostowania taśm, przy wykorzystaniu prostowarki dedykowany branży obróbki plastycznej metali.Zbiór danych zawiera wyniki badań przemysłowych nad możliwością eliminacji wibracji taśmy podczas pomiaru jej płaskości.,

This dataset contains the simulated data of a ground-signal-ground on-wafer probe landed on a microstrip variable-impedance device (DUT) with a 775 micron (um) microstrip line neighboring the device and without any line neighboring the device. Two variables were investigated in the data: the impedance of the DUT and the X,Y location of the neighboring line. The reflection coefficient of the probe was recorded from 1 Gigahertz (GHz) to 150 GHz. We use a metric discussed in the complementary paper that we deem 'maximum error' which is the maximum value, across the frequency band, of the absolute difference between the probe reflection coefficient, at a specific DUT impedance and neighboring line location, and the probe reflection coefficient with no line nearby. Figure 2,3, and 4 are all different conditions of DUT impedances and neighboring line locations. In the paper, red curves and red X markers correspond to when the maximum error metric has exceeded 0.03. Green curves and green checkmark markers correspond to when the maximum error metric is below 0.015 and the yellow curves and yellow diamond markers correspond to when the maximum error metric is between 0.015 and 0.03. This dataset also contains the measured and simulated data for the probe reflection coefficient when landed on the output of a high-electron-mobility transistor (HEMT) with and without a nearby 775um line. The bias point of the HEMT device was Vds: 10V and Ids: 10mA. The HEMT measurement with no line nearby was used as the impedance of the DUT for the probe simulation. The probe simulation was calibrated using an Open-Short-Load (OSL) calibration technique so that the measurement and simulation reference planes were the same.