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Atom-Based Device Navigator (ABDNavigator)
ABDNavigator is software written for scanning probe (e.g. scanning tunneling microscope) control and sample navigation of atom-based devices. Here atom-based devices refer to devices whose components span from the micron scale range down to sub nanometer and are probed, and typically fabricated by scanning tunneling microscope.
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Silicon Micromachined Heterodyne Array Receiver at 1.9 THz Project
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"We are proposing a new concept of integrated component development technology at submillimeter wavelengths that will dramatically simplify the fabrication, assembly, and integration of large focal plane arrays and imagers. This technology has the potential to significantly increase the pixel count of detector arrays and reduce the mass, volume, and complexity of array receivers for a broad range of applications in astrophysics and earth sciences. We will develop and demonstrate a highly integrated silicon-micromachined array receiver at 1.9 THz based on advanced dual-polarized, sideband-separating, balanced heterodyne mixers. The receiver front-end will be integrated with a novel micro-lens antenna array. We will design full-waveguide-band 90-degree quadrature hybrids, orthomode transducers (OMT), polarization twists, in-phase power splitters, and directional couplers at 1.9 THz; fabricate them using deep reactive ion etching (DRIE) based silicon micromachining, integrate them with existing HEB mixers at 1.9 THz; and test and fully characterize them in our laboratory. The scientific importance of high-resolution spectroscopic observations at submillimeter wavelengths is underscored by the key role of heterodyne spectrometers in the ESA cornerstone Herschel Space Observatory as well as the ground-based ALMA and airborne SOFIA. Star formation and key phases of galaxy evolution occur in region enshrouded by dust that obscures them at infrared and optical wavelengths, while the temperature range of the interstellar medium of ten to a few thousand Kelvin in these regions excites a wealth of submillimeter-wave spectral lines. With high-resolution spectroscopy, resolved line profiles reveal the dynamics of star formation, directly revealing details of turbulence, outflows, and core collapse. Observations of emission from ionized species such as C+ at 1900.53690 GHz (158 um), allow one to directly measure the cooling of the diffuse component of the interstellar m
Development of Immersion Gratings to Enable a Compact Architecture for High Spectral and Spatial Resolution Imaging Project
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Fabricate Si immersed gratings for IR (1150 – 6500 nm) spectroscopy to support ground-based, airborne, and space-based infrared spectrometers.
These devices offer substantial advantages in compactness, formatting, and efficiency over other dispersive devices and have 3.44 times the resolving power of a conventional front-surface device for a grating of a given size.
 

Patent AT-E400402-T1: [Translated] DEVICE AND METHOD FOR GENERATING MICROSTRUCTURES
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The device for producing microstructures has a rotating driven spindle (12) and a holder for clamping a workpiece (16). A fast drive is coupled to a tool (32) over a guidance arrangement, which permits adjustment of the tool in an axial direction of the fast drive against a return force. The drive has high rigidity in the plane perpendicular to the drive direction. An independent claim is made for an actuator (30) for moving the tool of a turning machine (10) to produce a micro-structured surface in a workpiece, especially using a piezoelectric drive.
A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies
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This dataset contains the simulated data of a ground-signal-ground on-wafer probe landed on a microstrip variable-impedance device (DUT) with a 775 micron (um) microstrip line neighboring the device and without any line neighboring the device. Two variables were investigated in the data: the impedance of the DUT and the X,Y location of the neighboring line. The reflection coefficient of the probe was recorded from 1 Gigahertz (GHz) to 150 GHz. We use a metric discussed in the complementary paper that we deem 'maximum error' which is the maximum value, across the frequency band, of the absolute difference between the probe reflection coefficient, at a specific DUT impedance and neighboring line location, and the probe reflection coefficient with no line nearby. Figure 2,3, and 4 are all different conditions of DUT impedances and neighboring line locations. In the paper, red curves and red X markers correspond to when the maximum error metric has exceeded 0.03. Green curves and green checkmark markers correspond to when the maximum error metric is below 0.015 and the yellow curves and yellow diamond markers correspond to when the maximum error metric is between 0.015 and 0.03. This dataset also contains the measured and simulated data for the probe reflection coefficient when landed on the output of a high-electron-mobility transistor (HEMT) with and without a nearby 775um line. The bias point of the HEMT device was Vds: 10V and Ids: 10mA. The HEMT measurement with no line nearby was used as the impedance of the DUT for the probe simulation. The probe simulation was calibrated using an Open-Short-Load (OSL) calibration technique so that the measurement and simulation reference planes were the same.
A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies
공공데이터포털
This dataset contains the simulated data of a ground-signal-ground on-wafer probe landed on a microstrip variable-impedance device (DUT) with a 775 micron (um) microstrip line neighboring the device and without any line neighboring the device. Two variables were investigated in the data: the impedance of the DUT and the X,Y location of the neighboring line. The reflection coefficient of the probe was recorded from 1 Gigahertz (GHz) to 150 GHz. We use a metric discussed in the complementary paper that we deem 'maximum error' which is the maximum value, across the frequency band, of the absolute difference between the probe reflection coefficient, at a specific DUT impedance and neighboring line location, and the probe reflection coefficient with no line nearby. Figure 2,3, and 4 are all different conditions of DUT impedances and neighboring line locations. In the paper, red curves and red X markers correspond to when the maximum error metric has exceeded 0.03. Green curves and green checkmark markers correspond to when the maximum error metric is below 0.015 and the yellow curves and yellow diamond markers correspond to when the maximum error metric is between 0.015 and 0.03. This dataset also contains the measured and simulated data for the probe reflection coefficient when landed on the output of a high-electron-mobility transistor (HEMT) with and without a nearby 775um line. The bias point of the HEMT device was Vds: 10V and Ids: 10mA. The HEMT measurement with no line nearby was used as the impedance of the DUT for the probe simulation. The probe simulation was calibrated using an Open-Short-Load (OSL) calibration technique so that the measurement and simulation reference planes were the same.
Patent AT-E400034-T1: [Translated] OPTICAL SCANNING PEN, SCANNING MODULE AND METHOD OF USE
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A high speed non-contact beam scanning device sized and shaped to provide the ergonomic benefits of a pen or wand, yet can scan a wide angle moving beam across an information-bearing target in one or two dimensional scan patterns such as lines, rasters or other patterns in order to read information therefrom. The device is well suited for reading one or two dimensional bar-code or other printed matter. In order to achieve the high density optical packaging necessary for its high performance to size benefits the device employs a novel in-line or "axial" gyrating, or "axial" scan element. The axial scan element can accept an input light beam at one end and cause it to emerge from its opposite end as a scanned beam, propagating in the same general forward direction it had upon entering the element. Reflected light, which carries information contained on the target, is collected by an internal non-imaging light concentrator and is processed by signal processing electronics. All components are integrated into a thin low mass module small enough to fit in a pen. Communication from the device is achievable by a cable or by wireless transmission.
Patent AT-E401226-T1: [Translated] DEVICE FOR STORING AND HANDLING METAL TABLETS AND MODULE FOR THE DEVICE
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The module (40) consists of a holder for a container used e.g. in the preparation of food on a large scale. It is made from stainless steel tubing or rod, bent into shape and having its ends welded together to form a supporting base (41) and side walls (42, 43). Modules can be stacked on top of one another in a column, e.g. on a trolley, and separated for cleaning.
Patent AT-E399977-T1: [Translated] OPTICAL PROBE AND APPARATUS AND METHOD USING THE SAME
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The probe comprises a light source (20), means for shaping (24, 25, 21) the beam emitted by said light source and the beam coming from a surface arranged close to a target distance, an optical detector unit (22), comprising a pinhole diaphragm (26) and a photoelectric detector (28), providing a voltage peak (31) when said surface is at said target distance and further comprising a diaphragm (27) with a hole larger than said pinhole and a photoelectric detector (29), providing a voltage greater than that produced by said detection sensor (28), except when said surface is a the target distance. The method uses the probe to measure the thickness of an optical lens.
Networked Instrumentation Element
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Armstrong researchers have developed a networked instrumentation system that connects modern experimental payloads to existing analog and digital communications infrastructures. In airborne applications, this system enables a cost-effective, long-range, line-of-sight network link over the S and L frequency bands that supports data rates up to 10 megabits per second (Mbps) and a practically unlimited number of independent data streams. The resulting real-time payload link allows researchers to make in-flight adjustments to experimental parameters, increasing overall data quality and eliminating the need to repeat flights.

Work to date: The team has developed and flight-tested the 10 Mbps bi-direction aircraft-to-ground, line-of-sight network. A follow-on project, Space-Based Range Demonstration and Certification (SBRDC) Flight Demonstration #2, involved integration of this system with a phased-array antenna and controller to provide a 10 Mbps over-the-horizon network downlink. This prototype system was further refined into a more operational system that provided the Airborne Research Test System (ARTS) aboard the Full-Scale Advanced Systems Testbed (FAST) access to thousands of parameters from the heavily instrumented aircraft. Engineers were able to view ARTS network data output in the control room, without replacing any aircraft instrumentation or ground equipment.  Additionally, four streams of network data from onboard hot-film sensors was recorded onboard and transmitted to the control room.

Looking ahead: Work has begun to design a new system that incorporates state-of-the-art transceiver technology. The new system is expected to allow a five-fold improvement in throughput, to 40 Mbps.

Benefits

  • Flexible: Expands the utility of existing airborne platforms with legacy communications systems by supporting state-of-the-art payloads that leverage current network technology
  • Economical: Achieves a bi-directional, line-of-sight network without the need to replace existing communications infrastructure
  • Flight efficient: With real-time control of experimental parameters, reduces the need for repeat flights

Applications

  • Secure local line-of-sight communications
  • Global space-based communications via satellite links